| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist pattern forming method capable of forming a satisfactory minute pattern, and to provide a manufacturing method of a semiconductor device that employs the same. SOLUTION: The resist pattern forming method comprises a step of forming a first resist pattern 101a, capable of supplying an acid on a semiconductor substrate 103; a step of forming a second resist 102 on the first resist pattern; a step of forming a bridging layer 104 on an interface portion of the second resist, contacting the first resist pattern; and a step of removing a non-bridging portion of the second resist to form a second resist pattern. The step of forming the second resist pattern 102a includes a first developing step for developing using water, a second developing step of developing with a solution having higher solderbility with respect to the second resist than that of the water, after the first developing step, and a step of rinsing with water after the second developing step. COPYRIGHT: (C)2008,JPO&INPIT |
