| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a field-effect transistor capable of improving a driving current by having a structure for suppressing pinch-off. SOLUTION: The semiconductor device comprises the field-effect transistor equipped with a source region 111 and a drain region 121, a channel region 101 existing between the source region 111 and the drain region 121 while having opposed principal surfaces and a pair of gate electrodes 107, 108 provided on the principal surfaces through gate insulating films 103, 104 while a space between the opposed principal surfaces is larger in the drain region 121 side than that in the source region 111 side. COPYRIGHT: (C)2008,JPO&INPIT
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