| 摘要 |
PROBLEM TO BE SOLVED: To allow a plated copper film wherein stress migration is suppressed by reducing crystal grain diameters, to be formed on a substrate. SOLUTION: A substrate with recessed parts for wiring which are covered with a seed layer, formed on the surface is prepared. The seed layer is brought into contact with a copper sulfate plating solution containing copper sulfate and≥2.0 M sulfur originating in sulfuric acid, and then the seed layer is used as a cathode, and an electric voltage is applied between the seed layer and an anode dipped in the copper sulfate plating solution, for forming the plated copper film on the surface of the seed layer. COPYRIGHT: (C)2008,JPO&INPIT
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