| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem wherein, when the position of an upper silicon substrate is close to a silicon wafer, heat is taken by radiation convection from a heat absorption film (hot contact side), it transfers to a cold contact, and hence the output of a sensor is lowered. SOLUTION: The infrared sensor comprises a thermopile element that is formed on a surface of a first substrate and has a hot contact and a cold contact, a second substrate that covers a forming section of the thermopile element of the first substrate, is disposed separately from the first substrate by an interval of 70μm-1 mm, and transmits infrared rays, and a spacer member made of resin that is disposed on the cold contact of the thermopile element and sticks the first substrate to the second substrate at the interval. COPYRIGHT: (C)2008,JPO&INPIT
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