发明名称 |
COMPOSITIONS OF DOPED, CO-DOPED AND TRI-DOPED SEMICONDUCTOR MATERIALS |
摘要 |
Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion. |
申请公布号 |
WO2008054840(A9) |
申请公布日期 |
2008.08.21 |
申请号 |
WO2007US63330 |
申请日期 |
2007.03.05 |
申请人 |
WASHINGTON STATE UNIVERSITY RESEARCH FOUNDATION;LYNN, KELVIN;JONES, KELLY;CIAMPI, GUIDO |
发明人 |
LYNN, KELVIN;JONES, KELLY;CIAMPI, GUIDO |
分类号 |
C30B11/00;C30B9/00 |
主分类号 |
C30B11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|