Method for Forming Multi-Layered Binary Oxide Film for Use in Resistance Random Access Memory

摘要

The invention relates to a method for forming a multi-layered binary oxide film for ReRAM. The method includes forming a lower electrode layer on a substrate; forming a metal layer on the lower electrode layer in a vacuum atmosphere; oxidizing the metal layer into a binary oxide film in a vacuum atmosphere; repeating the steps of forming and oxidizing the metal layer to form a desired thickness of the multi-layered binary oxide film; and forming an upper electrode layer on the multi-layered film. The method allows a nonvolatile memory device more efficient than the conventional perovskite structure in a simple process without concerns for surface contamination since the metal layer is formed and oxidized in a vacuum atmosphere.