| 摘要 |
<p>A sense amplifier has a transimpedance amplifier capable of producing an output voltage level proportionate to a current variation sensed going into a bitline. A transconductance device is configured to produce varying bitline current in response to the transimpedance amplifier output voltage. The transconductance device is capable of utilizing the transimpedance amplifier output voltage as feedback to produce a bitline clamp voltage level. The transimpedance amplifier configured to produce an output voltage proportionate to a cell current of a selected memory cell and provide an output signal corresponding to a memory cell state. An output amplifier is coupled to the transimpedance amplifier and capable of producing an output signal level proportionate to the transimpedance amplifier output voltage. A bias circuit is coupled to the transimpedance amplifier and the output amplifier, the bias circuit is capable of producing reference mirror currents through the transimpedance amplifier and the output amplifier.</p> |
