High mobility PMOS and NMOS devices having Si—Ge quantum wells

摘要

At least one method, apparatus and system disclosed involves semiconductor base structure adapted for accepting at least one of a NMOS device and a PMOS device. A substrate is formed. A strained relaxed layer is formed on the substrate. A first tensile strained layer is formed on the strained relaxed layer. A first compressive strain layer is formed on the first tensile strained layer.

主权项

1. A method for providing a semiconductor base structure, comprising:
forming a substrate; forming a strained relaxed layer on said substrate; forming a first tensile strained layer on said strained relaxed layer; forming a first compressive strain layer on said first tensile strained layer; forming a second tensile strained layer above said first compressive strain layer; and forming a second compressive strain layer above said second tensile strained layer.