发明名称 |
LAYOUT DESIGN METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To solve the problem that an inter-wiring capacitance value is changed since a dummy metal is inserted to a layout after timing is matched after the end of layout routing processing when preparing a mask required for manufacturing a semiconductor device, timing design is required again and a design period (TAT) from the end of the layout routing processing to mask preparation becomes long. SOLUTION: From the stage of the layout routing processing, a wirable area rate is given to a region excluding existing wiring for an arbitrary unit area, and layout design is performed in consideration of timing and a process area rate. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008192962(A) |
申请公布日期 |
2008.08.21 |
申请号 |
JP20070027833 |
申请日期 |
2007.02.07 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KANAZAWA HIDEKI;KONISHI MASAFUMI;MATSUDA MASAYUKI;SHIBATA KENZO |
分类号 |
H01L21/82;G06F17/50;H01L21/822;H01L27/04 |
主分类号 |
H01L21/82 |
代理机构 |
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主权项 |
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地址 |
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