发明名称 LAYOUT DESIGN METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To solve the problem that an inter-wiring capacitance value is changed since a dummy metal is inserted to a layout after timing is matched after the end of layout routing processing when preparing a mask required for manufacturing a semiconductor device, timing design is required again and a design period (TAT) from the end of the layout routing processing to mask preparation becomes long. SOLUTION: From the stage of the layout routing processing, a wirable area rate is given to a region excluding existing wiring for an arbitrary unit area, and layout design is performed in consideration of timing and a process area rate. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008192962(A) 申请公布日期 2008.08.21
申请号 JP20070027833 申请日期 2007.02.07
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KANAZAWA HIDEKI;KONISHI MASAFUMI;MATSUDA MASAYUKI;SHIBATA KENZO
分类号 H01L21/82;G06F17/50;H01L21/822;H01L27/04 主分类号 H01L21/82
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