发明名称 HEAT TREATMENT SYSTEM FOR CRYSTALLIZATION OF AMORPHOUS SILICON
摘要 PROBLEM TO BE SOLVED: To provide an amorphous silicon crystallization system, capable of improving productivity of a flat plate display by increasing the cooling speed of a substrate after heat treatment, when manufacturing a polycrystalline silicon thin film for TFT that is used for the flat plate display, such as LCD. SOLUTION: A heat treatment system 10 includes: a substrate heat treatment part 20 for heat treating a substrate 37; a substrate-cooling part 30 for cooling the substrate 37 at a speed higher than the maximum cooling speed of the substrate heat treatment part 20; and a substrate storage part 40 for storing the substrate 37. In particular, according to the present invention, it is possible to increase the substrate-cooling speed after crystallization heat treatment and so sharply improve the productivity of the flat plate display by providing another substrate-cooling part. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008193077(A) 申请公布日期 2008.08.21
申请号 JP20080016152 申请日期 2008.01.28
申请人 TERA SEMICON CORP 发明人 JANG TAEK-YONG;BYUNG-IL LEE;RI NAGAHIRO;JANG SEOK PIL
分类号 H01L21/20 主分类号 H01L21/20
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