| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that suppresses the growth of a crack formed in a layer to be transferred, and achieves stable operation. SOLUTION: The semiconductor device has a substrate 10 on which the layer 12 to be transferred is arranged, and a silane coupling agent 14 chemically bonded to the surface of the layer 12 to be transferred. The silane coupling agent 14 is chemically bonded to the surface of the crack 16 formed in the layer 12 to be transferred, and a void formed by the crack 16 is filled with the silane coupling agent 14. COPYRIGHT: (C)2008,JPO&INPIT
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