NANO IMPRINT MOLD MANUFACTURING METHOD, LIGHT EMITTING DIODE MANUFACTURING METHOD AND LIGHT EMITTING DIODE USING THE NANO IMPRINT MOLD MANUFACTURED BY THE METHOD

摘要

The present invention relates to a nano-imprint mold manufacturing method, a light emitting diode using the same and a method for manufacturing the light emitting diode. According to the present invention, the method for manufacturing a light emitting diode comprises: a step of forming an n-type nitride semiconductor layer, a luminous layer, and a p-type nitride semiconductor layer formed on a temporary substrate; a step of forming a p-type reflective electrode on the p-type nitride semiconductor layer; a step of forming a conductive substrate on the p-type reflective electrode; a step of removing the temporary substrate to expose the n-type nitride semiconductor layer; a step of forming a nano-imprint resist layer on the n-type nitride semiconductor layer; a step for imprinting a nano-pattern on the nano-imprint resist layer by pressurizing a nano-imprint mold manufactured by a nano-imprint mold manufacturing method in accordance with the present invention to the nano-imprint resist layer; a step of separating the nano-imprint mold from the nano-imprint resister layer where the nano-pattern is formed; and a step of forming an n-type electrode by etching a part of the nano-imprint resister layer where the nano-pattern is formed. According to the present invention, provided are the nano-imprint mold manufacturing method for efficiently and economically forming a nano-pattern to improve light extraction efficiency of a light emitting diode, a light emitting diode manufacturing method using a nano-imprint mold, and the light emitting diode.