Method of manufacturing a transistor

摘要

The method involves forming a stack with a semiconductor substrate (112) in which a dielectric layer (106), gate layer (104) and mask layer are arranged, and forming an etching mask (102) from the mask layer. The gate layer is etched along the mask. Ionic implantation is performed in a substrate part uncovered by the gate layer. The mask is trimmed on a length equal to a gate length of a transistor (100). An etching mask (120) is formed on the gate layer. The former mask is retracted. The gate layer is etched along the latter mask. Ionic implantation is performed on another substrate part.