| 摘要 |
A thermal treatment apparatus and a method for forming an isolation layer of a semiconductor device using the same are provided to uniform molecule arrangement of SOD(Silicon On Diamond) material by applying electric field to some ionized SOD material, thereby improving uniformity of SOD. A thermal treatment apparatus comprises a chamber(112), a susceptor(108), a first thermal shield unit(104), an electric field generation unit(102), and a second thermal shield generation unit(106). The susceptor is installed in the chamber to fix a wafer(110). The first thermal shield unit surrounds the susceptor in the chamber, and protecting the wafer. The electric field generation unit is installed outside the first thermal shield generation unit. The second thermal shield unit covers a region including the electric field generation unit, the first thermal shield generation unit, and the susceptor, and protects the electric field generation unit and the susceptor. A method for forming an isolation layer of a semiconductor device using the thermal treatment apparatus includes the steps of: depositing SOD material on the wafer equipped with a trench; applying electric field to the wafer to align molecules of the SOD material evenly; and thermal treating the SOD material to fill the trench.
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