| 主权项 |
1. A semiconductor memory device comprising a plurality of memory cells arranged like a matrix, each of the memory cells being configured to be capable of holding two bits of information and including a first cell configured to be capable of holding one bit of information and a second cell adjacent, in a column direction, to the first cell and configured to be capable of holding another bit of information, the semiconductor memory device further comprising:
a bit line pair extending in the column direction and coupled to both the first and the second cell; a first and a second word line extending in a row direction and coupled to each of the first and the second cell; a match line extending in the row direction; a search line pair extending in the column direction to transfer search data for a data search; a logic operation cell coupled to the search line pair and the match line to drive the match line based on comparison results between information held in the first and the second cell and search data transferred by the search line pair; and a search line driver provided correspondingly to the search line pair to drive the search line pair, wherein, in a state with the search line pair precharged to a third voltage between a first voltage and a second voltage, the search line driver drives, according to the search data, one and the other search line included in the search line pair to the first and the second voltage, respectively. |
