发明名称 |
High-voltage vertical FET |
摘要 |
<p>A transistor fabricated on a semiconductor die (25) is arranged into sections (36) of elongated transistor segments. The sections are arranged in rows and columns substantially across the semiconductor die. Adjacent sections in a row or a column are oriented such that the length of the transistor segments in a first one of the adjacent sections extends in a first direction, and the length of the transistor segments in a second one of the adjacent sections extends in a second direction, the first direction being substantially orthogonal to the second direction.</p> |
申请公布号 |
EP1959497(A2) |
申请公布日期 |
2008.08.20 |
申请号 |
EP20070254019 |
申请日期 |
2007.10.10 |
申请人 |
POWER INTEGRATIONS, INC. |
发明人 |
PARTHASARATHY, VIJAY;BANERJEE, SUJIT;MANLEY, MARTIN H. |
分类号 |
H01L29/78;H01L21/77;H01L29/40;H01L29/423 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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