| 摘要 |
A semiconductor device employing a semiconductor plug as a shared contact structure and fabricating method thereof are provided to prevent flow of leakage current through a junction of low concentration node impurity region in case of applying reverse bias is applied between a shared semiconductor plug and a semiconductor substrate. A semiconductor device employing a semiconductor plug as a shared contact structure comprises gate electrodes(120t',120t"), node impurity regions(125a,125b), a shared semiconductor plug(140), and metal silicide layers(150). The gate electrode is formed on a semiconductor substrate(105). The node impurity region is formed adjacent to the gate electrode in the semiconductor substrate. The shared semiconductor plug covers a first region of the gate electrode and the node impurity region near the first region, connecting the gate electrode with the node impurity electrode electrically. The metal silicide layer is formed on the gate electrode, the surface of the shared semiconductor plug, and the surface of the node impurity region. The shared semiconductor plug is formed through a selective epitaxial growth.
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