SEMICONDUCTOR LIGHT EMITTING DEVICE, AND PHOTOELECTRON INTEGRATED CIRCUIT USING THE SAME, AND METHOD FOR MANUFACTURING PHOTOELECTRON INTEGRATED CIRCUIT

摘要

A semiconductor light emitting device, a photoelectron integrated circuit using the same, and a method for manufacturing the photoelectron electron integrated circuit are provided to emit light with high efficiency through a general silicon process. A semiconductor light emitting device includes an insulation layer, a first electrode, a second electrode, and an emitting light unit. The insulation layer is formed on a semiconductor substrate. The first electrode is formed on the insulation layer and injects electrons. The second electrode is formed on the insulation layer and injects holes. The light emitting unit is electrically connected to the first electrode and the second electrode. Each of the insulation layer, the first electrode, and the second electrode is made by a first single crystalline material. A thickness of the light emitting unit is thinner than the insulation layer. The light emitting unit has a light emitting element, which is formed with a thin film capable of emitting light.