发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor memory device is provided to decrease a layout size of the semiconductor memory device by enabling first and second sense amplifiers to share a single driver. A semiconductor memory device includes plural sense amplifiers(110,120), which amplify data from banks and output the amplified result as amplification signals. The semiconductor memory device includes a controller(130) and a driver(140). The controller detects data output states of the respective sense amplifiers and outputs a driving signal corresponding to the output data. The driver drives global I/O lines(RGIO) according to the driving signal. The controller floats the driver, when the sense amplifiers are turned off. When the amplification signal is received from one of the sense amplifiers, the controller generates the driving signal to control the driver.
申请公布号 KR20080076393(A) 申请公布日期 2008.08.20
申请号 KR20070016245 申请日期 2007.02.15
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, KI CHON
分类号 G11C7/10;G11C7/06;G11C7/08 主分类号 G11C7/10
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