| 发明名称 |
Semiconductor Device and Fabrication Method Thereof |
| 摘要 |
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks. |
| 申请公布号 |
US2016260842(A1) |
申请公布日期 |
2016.09.08 |
| 申请号 |
US201615153047 |
申请日期 |
2016.05.12 |
| 申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Yamazaki Shunpei;ARAI Yasuyuki;KOYAMA Jun |
| 分类号 |
H01L29/786;H01L21/02;H01L21/027;H01L21/3065;H01L21/308;G02F1/1333;H01L29/167;G02F1/133;G02F1/1339;G02F1/1343;G02F1/1362;G02F1/1368;H01L27/12;H01L29/66 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. (canceled) |
| 地址 |
Kanagawa-ken JP |
