IGBT Having a Deep Superjunction Structure

摘要

There are disclosed herein various implementations of an insulated-gate bipolar transistor (IGBT) having a deep superjunction structure. Such an IGBT includes a drift region having a first conductivity type situated over a collector having a second conductivity type. The IGBT also includes a gate trench extending through a base having the second conductivity type into the drift region. In addition, the IGBT includes a deep superjunction structure situated under the gate trench. The deep superjunction structure includes one or more first conductivity regions having the first conductivity type and two or more second conductivity region having the second conductivity type, the one or more first conductivity regions and the two or more second conductivity regions configured to substantially charge-balance the deep superjunction structure.

主权项

1. An insulated-gate bipolar transistor (IGBT) comprising:
a drift region having a first conductivity type situated over a collector having a second conductivity type opposite said first conductivity type; a gate trench extending through a base having said second conductivity type into said drift region; a deep superjunction structure comprising at least one first conductivity region having said first conductivity type and at least two second conductivity regions having said second conductivity type situated under said gate trench; said at least one first conductivity region and said at least two second conductivity regions configured to substantially charge balance said deep superjunction structure.