Bipolar Semiconductor Device Having a Charge-Balanced Inter-Trench Structure

摘要

There are disclosed herein various implementations of a bipolar semiconductor device having a charge-balanced inter-trench structure. Such a device includes a drift region having a first conductivity type situated over an anode layer having a second conductivity type. The device also includes first and second control trenches extending through an inversion region having the second conductivity type into the drift region, each of the first and second control trenches being bordered by a cathode diffusion having the first conductivity type. In addition, the device includes an inter-trench structure situated in the drift region between the first and second control trenches. The inter-trench structure includes one or more first conductivity regions having the first conductivity type and one or more second conductivity region having the second conductivity type, the one or more first conductivity regions and the one or more second conductivity regions configured to substantially charge-balance the inter-trench structure.

主权项

1. A bipolar semiconductor device comprising:
a drift region having a first conductivity type situated over an anode layer having a second conductivity type opposite said first conductivity type; first and second control trenches extending through an inversion region having said second conductivity type into said drift region, each of said first and second control trenches bordered by a cathode diffusion; an inter-trench structure comprising at least one first conductivity region having said first conductivity type and at least one second conductivity region having said second conductivity type situated in said drift region, between said first and second control trenches; said at least one first conductivity region and said at least one second conductivity region configured to substantially charge-balance said inter-trench structure.