| 摘要 |
A method of forming an isolation layer in a semiconductor device is provided to improve cycling threshold voltage shift and prevent a floating gate from being attacked during wet etch by forming a high HDP(High Density Plasma) oxide layer in a trench without overhangs through repeated DW(deposition Wet etch) scheme. A method of forming an isolation layer in a semiconductor device includes the steps of: forming a tunnel insulation layer(102) and first and second conductive layers(104,106) in an active region on a substrate(100), wherein the second insulation layer is thinner than the first insulation layer; forming a trench between the conductive layers on the substrate; forming a second insulation layer(114) to fill a part of the trench; carrying out wet etch to remove an overhang of the second insulation layer formed at the upper edge of the conductive layer; and forming insulation layers and performing the wet etch repeatedly until the space between the conductive layers and the trench are filled with the insulation layers.
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