| 摘要 |
A film forming method and a film forming apparatus are provided to improve controllability of the film thickness during cleaning and form an SiCN film that can function sufficiently as an etching stopper film or an interlayer insulating film by maintaining a relatively low etching rate during cleaning even when a film is formed at a relatively low temperature. An apparatus(2) for forming an SiCN film on a substrate to be treated comprises: a treatment vessel(4) having a treatment zone(5) for receiving the substrate to be treated; a supporting member for supporting the substrate to be treated within the treatment zone; a heater(72) for heating the substrate to be treated in the treatment zone; an exhaust system(73) for exhausting the inside of the treatment zone; a first treatment gas supply system(30) for supplying a first treatment gas comprising a silane-based gas to the treatment zone; a second treatment gas supply system(32) for supplying a second treatment gas comprising a nitriding gas to the treatment zone; a third treatment gas supply system(28) for supplying a third treatment gas comprising a hydrocarbon gas to the treatment zone; and a control part(74) for controlling the operation of the apparatus, the control part being set to carry out a method for forming an SiCN film with a predetermined thickness on the substrate to be treated by repeating a cycle several times, thereby laying up thin films formed per the cycle, wherein the cycle comprises: performing a first process of supplying a first treatment gas to the treatment zone, a second process of supplying a second treatment gas to the treatment zone, a third process of supplying a third treatment gas to the treatment zone, and a fourth process of cutting off the supply of the first treatment gas to the treatment zone; supplying the first to third treatment gases to the treatment zone without plasmarizing the treatment gases outside the treatment zone; and heating the treatment zone in the first to fourth processes to a first temperature at which the silane-based gas, the nitriding gas, and the hydrocarbon gas react with one another.
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