| 摘要 |
A heat processing method and apparatus for a semiconductor process, and a computer readable medium are provided to enable an oxide layer or an oxide nitride layer having excellent electric characteristics to be formed. A heat processing method for a semiconductor process includes receiving a plurality of processed substrates in a process region(5) of a process vessel(4); supplying oxidizing gas and reducing gas in the process region, heating the process region to react the oxidizing gas and the reducing gas in order to produce active oxygen species and active hydro-species; oxidizing a target layer to be processed on the substrates using the active oxygen species and active hydro-species; and heating the target layer under anneal gas atmosphere composed of active ozone or oxidizing species.
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