| 摘要 |
<p>A nitrogen-containing heteroaromatic ligand/transition metal complex is provided to produce a buffer layer with enhanced carrier injection and electric charge transport in an electric device, so that the buffer layer is useful for producing an organic thin film transistor with enhanced electrical properties including promoted electron or hole-injection and interlayer electric charge transport. A nitrogen-containing heteroaromatic ligand/transition metal complex represented by the formula(1):[R1-X-R2][M(Y)m]^- is useful as a buffer layer material which is able to perform solution process and does not use an acid-dopant, wherein X is optionally substituted C2-C30 heteroaromatic organic group containing nitrogen; R1 and R2 are each independently optionally substituted C1-C30 alkyl group, optionally substitutedC1-C30 heteroalkyl group, optionally substituted C1-C30 alkoxy group, optionally substituted C1-C30 heteroalkoxy group, optionally substituted C6-C30 aryl group, optionally substituted C6-C30 arylalkyl group, optionally substituted C6-C30 aryloxy group, optionally substituted C2-C30 heteroaryl group, optionally substituted C2-C30 heteroarylalkyl group, optionally substituted C2-C30 heteroaryloxy group, optionally substituted C5-C20 cycloalkyl group, optionally substituted C2-C30 heterocycloalkyl group, optionally substituted C1-C30 alkylester group, optionally substituted C1-C30 heteroalkylester group, optionally substituted C6-C30 arylester group, or optionally substituted C2-C30 heteroarylester group; M is a transition metal atom selected from Au, Cu, Pd and Pt; Y is halide, hydroxyl or acetate function group(OAc); and m is an integer from 3 to 4.</p> |
