| 摘要 |
<p>A semiconductor device and a method for manufacturing the same are provided to increase the reliability by forming an upper part of metal wire with resistance higher than that of center part of metal wire. A semiconductor device includes a metal wire. An upper surface of the metal wire is covered with a film. An upper portion of the metal wire in the vicinity of an interface with the film covering the upper surface of the metal wire has the durability higher than that of a center portion thereof. A mean diameter of a metal particle in the upper portion of the metal wire is less than that in the center portion thereof. The upper portion of the metal wire is made of an amorphous material. A lower portion of the metal wire in the vicinity of an interface with a film covering a lower surface of the metal wire has resistance higher than that of the center portion of the metal wire.</p> |
