发明名称 Insulating film material containing an organic silane compound, its production method and semiconductor device
摘要 An insulating film material formed by chemical vapor deposition, which contains an organic silane compound having such a structure that at least one secondary hydrocarbon group and/or tertiary hydrocarbon group is directly bonded to a silicon atom.
申请公布号 US7413775(B2) 申请公布日期 2008.08.19
申请号 US20060347312 申请日期 2006.02.06
申请人 TOSOH CORPORATION 发明人 HARA DAIJI;YOSHIDA KEISUKE
分类号 C23C16/18;C07F7/18;C23C16/40;H01L21/312;H01L21/316 主分类号 C23C16/18
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