发明名称 |
Insulating film material containing an organic silane compound, its production method and semiconductor device |
摘要 |
An insulating film material formed by chemical vapor deposition, which contains an organic silane compound having such a structure that at least one secondary hydrocarbon group and/or tertiary hydrocarbon group is directly bonded to a silicon atom.
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申请公布号 |
US7413775(B2) |
申请公布日期 |
2008.08.19 |
申请号 |
US20060347312 |
申请日期 |
2006.02.06 |
申请人 |
TOSOH CORPORATION |
发明人 |
HARA DAIJI;YOSHIDA KEISUKE |
分类号 |
C23C16/18;C07F7/18;C23C16/40;H01L21/312;H01L21/316 |
主分类号 |
C23C16/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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