THE METHOD OF CORRECTING FAULT DATA CAUSED BY CHARGE LOSS IN THE NON-VOLATILE MEMORY DEVICE

摘要

A method of correcting fault data caused by charge loss in a non-volatile memory device is provided to maintain the reliability of data of a memory cell included in the non-volatile memory device even in case of charge loss. According to a method of correcting fault data of a non-volatile memory device including a plurality of memory cells, fault data is detected from a second data group, by comparing a first data group read from the memory cells by referring to a first voltage(S410) with the second data group read from the memory cells(S430) by referring to a second voltage higher than the first voltage(S440). Fault data is detected from the first data group, through ECC(Error Correction Coding)(S450). The data of the memory cells are rewritten, by correcting fault data of the first data group and fault data of the second data group(S470).