发明名称 |
Semiconductor device including a high voltage generation circuit and method of a generating high voltage |
摘要 |
A semiconductor memory device comprises a first pump clock generator configured to generate a first pump clock signal based on a first power supply voltage. The device also comprises a first charge pump configured to generate a first pump output voltage in response to the first pump clock signal. The device also comprises a second pump clock generator configured to generate a second pump clock signal based on the first pump output voltage. The device also comprises a second charge pump configured to generate a second pump output voltage in response to the second pump clock signal. The device also comprises a third pump clock generator configured to generate a third pump clock signal based on the first power supply voltage. The device also comprises a third charge pump configured to generate a third pump output voltage in response to the third pump clock signal.
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申请公布号 |
US7414890(B2) |
申请公布日期 |
2008.08.19 |
申请号 |
US20060605227 |
申请日期 |
2006.11.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BYEON DAE-SEOK;LIM YOUNG-HO |
分类号 |
G11C16/04;G11C5/14 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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