发明名称 |
Ultra-high-Q surface-tension-induced monolithically integrated on-chip resonator and associated devices |
摘要 |
A resonator structure includes a substrate and a cladding layer formed on the substrate. A plurality of lens-shaped optical structures is formed on the cladding layer. The lens-shaped optical structures comprise chacolgenide glass being exposed to a reflow process so as to make smooth the surface of the resonator structure and increase substantially its Q factor.
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申请公布号 |
US7415058(B2) |
申请公布日期 |
2008.08.19 |
申请号 |
US20060543334 |
申请日期 |
2006.10.05 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
HU JUEJUN;AGARWAL ANURADHA M.;KIMERLING LIONEL C. |
分类号 |
H01S3/08 |
主分类号 |
H01S3/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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