METHOD OF FORMING A TITANIUM ALUMINIUM NITRIDE LAYER AND METHOD OF FORMING A PHASE-CHANGE MEMORY DEVICE USING THE SAME

摘要

A method for forming a titanium aluminum nitride layer and a method for forming a phase-change memory device using the same are provided to enhance a throughput by improving characteristics of the titanium aluminum nitride layer. A first reactant is formed by inducing a reactance between a first source including titanium and a second source including nitrogen(S100). A second reactant is formed by providing a third source including aluminum onto the substrate including the first reactant and inducing the reactance between the first reactant and the third source(S120). A third reactant is formed by providing a fourth source including nitrogen onto the substrate including the second reactant and inducing the reactance between the second reactant and the fourth source(S140).