NANOCRYSTAL, PREPARATION METHOD THEREOF AND ELECTRONIC DEVICES COMPRISING THE SAME

摘要

A nanocrystal, a preparation method thereof and electronics having the nanocrystal are provided to improve emission characteristics and color purity of the electronic device having the nanocrystal by employing buffer layer of non-semiconductive material surrounding nanocrystal core consisting of semiconductor. A nanocrystal has: a nanocrystal core(10) consisting of semiconductor; and a buffer layer(20) of non-semiconductive material surrounding the nanocrystal core. The nanocrystal core contains semiconductor of group III-V. The buffer layer is a calcogenic buffer layer. The nanocrystal optionally has at least one shell layer consisting of material selected from a group consisting of group II-VI compound, group II-V compound, group III-VI compound, group III-V compound, group IV-VI compound, group I-III-VI compound, group II-IV-VI compound, group II-IV-V compound and alloys thereof on the buffer layer. A preparation method of the nanocrystal comprises steps of: synthesizing the nanocrystal core by reacting semiconductor precursor in a reaction system having solvent and dispersant; and putting non-semiconductive material into the nanocrystal core solution and forming a buffer layer on the surface of the nanocrystal core. An electronic device such as display, electric luminous element, laser, linear optical device, sensor and photoelectric transformation element contains at least one nanocrystal prepared by the method. Further, the calcogenic buffer layer is selected from S, Se, Te and a mixture thereof.