发明名称 |
Gas reaction system and semiconductor processing apparatus |
摘要 |
A gas reaction system is disclosed which comprises a vaporizer ( 230 ) for generating a reaction gas by vaporizing a liquid material and a reaction chamber ( 221 A) wherein the reaction gas is reacted. The vaporizer ( 230 ) is integrally formed with a component member which defines the reaction chamber ( 221 A). The reaction gas generated in the vaporizer ( 230 ) is directly introduced into the reaction chamber ( 221 A). The vaporization chamber ( 232 ) of the vaporizer ( 230 ) is a space between an upper plate ( 230 A) and a cap ( 230 B) attached to the upper surface of the upper plate ( 230 A). A narrow passage ( 233 ) is formed between the cap ( 230 B) and the upper plate ( 230 A) which passage ( 233 ) communicates with the vaporization chamber ( 232 ).
|
申请公布号 |
US7413611(B2) |
申请公布日期 |
2008.08.19 |
申请号 |
US20040565676 |
申请日期 |
2004.07.23 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
IIZUKA HACHISHIRO |
分类号 |
B01D39/20;C23C16/00;B01J19/00;C23C16/44;C23C16/448;C23C16/455;H01L21/31 |
主分类号 |
B01D39/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|