发明名称 Gas reaction system and semiconductor processing apparatus
摘要 A gas reaction system is disclosed which comprises a vaporizer ( 230 ) for generating a reaction gas by vaporizing a liquid material and a reaction chamber ( 221 A) wherein the reaction gas is reacted. The vaporizer ( 230 ) is integrally formed with a component member which defines the reaction chamber ( 221 A). The reaction gas generated in the vaporizer ( 230 ) is directly introduced into the reaction chamber ( 221 A). The vaporization chamber ( 232 ) of the vaporizer ( 230 ) is a space between an upper plate ( 230 A) and a cap ( 230 B) attached to the upper surface of the upper plate ( 230 A). A narrow passage ( 233 ) is formed between the cap ( 230 B) and the upper plate ( 230 A) which passage ( 233 ) communicates with the vaporization chamber ( 232 ).
申请公布号 US7413611(B2) 申请公布日期 2008.08.19
申请号 US20040565676 申请日期 2004.07.23
申请人 TOKYO ELECTRON LIMITED 发明人 IIZUKA HACHISHIRO
分类号 B01D39/20;C23C16/00;B01J19/00;C23C16/44;C23C16/448;C23C16/455;H01L21/31 主分类号 B01D39/20
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