METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING LOW DIELECTRIC MATERIAL

摘要

A method of forming a semiconductor device having a low dielectric material is provided to decrease an RC-delay in a high integrity semiconductor device by forming a protective film for preventing a change of a dielectric constant of a low dielectric constant material. An insulation film is formed on a semiconductor substrate(100). A photoresist pattern is formed on the insulation film. The insulation film is patterned by using the photo photoresist pattern as a mask, such that a groove(109) is formed to penetrate the insulation film. After the groove is formed, a carbon-based protection film is formed on an upper surface of the photo photoresist pattern, a bottom surface of the groove, and a sidewall of the groove. A protective film pattern(112) is formed on the sidewall of the groove by etching the protective film.