| 摘要 |
A nonvolatile ferroelectric memory device having a power control function improves a sensing margin by stably controlling a power applied to a cell capacitor. The sensing margin of a cell can be improved by controlling an operation voltage of the cell depending on an external supply voltage VEXT and applying a power voltage VCC obtained by dropping an external power voltage to adjacent circuits. Additionally, the reliability of a capacitor at a high voltage can be improved by employing a ferroelectric capcitor for stabilizing power to obtain capacitance of high capacity with a small area.
|
