发明名称 |
Yield improvement in silicon-germanium epitaxial growth |
摘要 |
A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are formed in the single-crystal Si layer. The STI regions sandwich and define a first single-crystal Si region. Next, silicon-germanium (SiGe) mixture is deposited on top of the structure in a SiGe deposition condition so as to grow (i) a second single-crystal silicon region grows up from the top surface of the first single-crystal silicon region and (ii) first and second polysilicon regions from the top surfaces of the first and second STI regions, respectively. By increasing SiGe deposition temperature and/or lowering precursor flow rate until the resulting yield is within a pre-specified range, a satisfactory SiGe deposition condition can be determined for mass production of the structure. |
申请公布号 |
US7413967(B2) |
申请公布日期 |
2008.08.19 |
申请号 |
US20060468030 |
申请日期 |
2006.08.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DUPUIS MARK D.;HODGE WADE J.;KELLY DANIEL T.;WUTHRICH RYAN W. |
分类号 |
H01L21/20;H01L21/205;H01L29/04;H01L29/10;H01L29/12;H01L31/036 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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