| 摘要 |
A plasma process apparatus is provided to prevent a wafer from being contaminated by preventing particles, which are levitated by plasma, from being dropped on the wafer. A plasma process apparatus includes a chamber(10), an upper electrode(12), an electrostatic chuck(14), a lower electrode(16), and a particle mask(20). The chamber forms a plasma generating space. The upper electrode is formed on the chamber and receives a high frequency power for generating plasma. A reaction gas supply hole is formed on the upper electrode. The electrostatic chuck is mounted under the upper electrode. A wafer is mounted on the electrostatic chuck. The lower electrode is formed under the electrostatic chuck and interacts with the upper electrode, such that the reaction gas is turned into a plasma state. The particle mask prevents particles from being dropped on the wafer, when a plasma process is completed.
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