| 发明名称 |
GaN-based permeable base transistor and method of fabrication |
| 摘要 |
An etched grooved GaN-based permeable-base transistor structure is disclosed, along with a method for fabrication of same.
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| 申请公布号 |
US7413958(B2) |
申请公布日期 |
2008.08.19 |
| 申请号 |
US20050532456 |
申请日期 |
2005.04.22 |
| 申请人 |
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. |
发明人 |
GUNTER LIBERTY L;CHU KANIN;EDDY, JR. CHARLES R;MOUSTAKAS THEODORE D;BELLOTTI ENRICO |
| 分类号 |
H01L21/302;H01L21/331;H01L21/461;H01L27/06;H01L29/20;H01L29/772 |
主分类号 |
H01L21/302 |
| 代理机构 |
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