Method of manufacturing a metal-insulator-metal capacitor

摘要

The present invention provides method of manufacturing a metal-insulator-metal capacitor ( 100 ). A method of manufacturing includes depositing a first refractory metal layer ( 105 ) over a semiconductor substrate ( 110 ). The first refractory metal layer ( 105 ) over a capacitor region ( 200 ) of the semiconductor substrate ( 110 ) is removed and a second refractory metal ( 300 ) is deposited over the capacitor region ( 200 ). Other aspects of the present invention include a metal-insulator-metal capacitor ( 900 ) and a method of manufacturing an integrated circuit ( 1000 ).