| 摘要 |
A method produces stacked capacitors for dynamic memory cells, in which a number of trenches ( 48 ) are formed in the masking layer ( 40 ), each trench ( 48 ) being arranged above a respective contact plug ( 26 ) and extending from the top ( 42 ) of the masking layer ( 40 ) to the contact plugs ( 26 ). A conductive layer ( 50 ) covers the side walls ( 49 ) of the trenches ( 48 ) and the contact plugs ( 26 ) in order to form a first electrode ( 60 ) of a stacked capacitor ( 12 ). In an upper region ( 63 ), which is remote from the contact stack ( 26 ), the conductive layer ( 50 ) is replaced by an insulating layer, so that it is not possible for a short circuit to arise in the event of any adhesion between adjacent electrodes.
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