发明名称 |
High k gate insulator removal |
摘要 |
A method of forming a high k gate insulation layer in an integrated circuit on a substrate. A high k layer is deposited onto the substrate, and patterned with a mask to define the high k gate insulation layer and exposed portions of the high k layer. The exposed portions of the high k layer are subjected to an ion implanted species that causes lattice damage to the exposed portions of the high k layer. The lattice damaged exposed portions of the high k layer are etched to leave the high k gate insulation layer.
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申请公布号 |
US7413996(B2) |
申请公布日期 |
2008.08.19 |
申请号 |
US20030413051 |
申请日期 |
2003.04.14 |
申请人 |
LSI CORPORATION |
发明人 |
KAMATH ARVIND;LO WAI;GOPINATH VENKATESH |
分类号 |
H01L21/00;H01L21/28;H01L21/311;H01L29/51 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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