| 摘要 |
Provided is a manufacturing method of a CMOS image sensor. The method includes forming an interlayer insulating layer, a color filter layer, and a planarizing layer. A first photoresist is applied on the planarizing layer, and patterning of the first photoresist is performed using a first mask to form a microlens pattern corresponding to photodiodes on a semiconductor substrate. The microlens pattern is reflowed to form dome-shaped microlenses. A second photoresist is applied on the resulting substrate, and patterning of the second photoresist is preformed using a second mask to retain the second photoresist on top portions of the microlenses. Edge portions of the microlenses are selectively removed using the patterned second photoresist as a mask to make CD (critical dimension) spaces between the microlenses uniform.
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