发明名称 |
Method for forming a self-aligned nitrogen-containing copper silicide capping layer in a microstructure device |
摘要 |
By forming a copper/silicon/nitrogen alloy in a surface portion of a copper-containing region on the basis of a precursor layer, highly controllable and reliable process conditions may be established. The precursor layer may be formed on the basis of a liquid precursor solution, which may exhibit a substantially self-aligned and self-limiting deposition behavior.
|
申请公布号 |
US7413985(B2) |
申请公布日期 |
2008.08.19 |
申请号 |
US20070853994 |
申请日期 |
2007.09.12 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
STRECK CHRISTOF;KAHLERT VOLKER |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|