IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF

摘要

A method for fabricating an image sensor is provided to obtain higher amplification and embody a clearer image by effectively controlling the dark current of an image sensor. A CMOS image sensor(200) is formed. A cooling apparatus(100) is formed under the CMOS image sensor. A cooling part(300) is formed under the cooling apparatus. The process for forming the cooling apparatus can be formed by a process for forming a DC-type P-N junction thermoelectric semiconductor. The process for forming the thermoelectric semiconductor can include the following steps. A first insulation layer(120) is formed on a substrate. A first conductive layer(130) is formed on the first insulation layer, including a plurality of trenches to selectively expose the first insulation layer. An intrinsic layer is formed on the first conductive layer, filling the trenches. Ions of a first conductivity type are implanted into one region of the intrinsic layer to form a conductive layer(142) of the first conductivity type. Ions of a second conductivity type are implanted into the other region of the intrinsic layer to form a conductive layer(144) of the second conductivity type. The conductive layer of the first conductivity type can be electrically connected to the conductive layer of the second conductivity type by a second conductive layer.