发明名称 HIGH VOLTAGE GENERATING CIRCUIT, CONTROLLING METHOD THEREOF AND SEMICONDUCTOR MEMORY DEVICE COMPRISING THE SAME
摘要 A high voltage generation circuit, a control method thereof and a semiconductor memory device comprising the same are provided to minimize fluctuation of a high voltage by dividing a number of active kickers into a first, a second and a third active kicker group. A number of active kickers output a high voltage by receiving a first enable pulse signal or a second enable pulse signal, and are disabled by receiving a disable signal. An active kicker control part(500) provides the first enable pulse signal, the second enable pulse signal or the disable signal to each active kicker selectively by being enabled by an active control signal. The active kicker control part divides the active kickers into a first, a second and a third active kicker group(410,420,430), and provides the first enable pulse signal to the first active kicker group only when the voltage level of the high voltage is lower than a reference level, and provides the second enable pulse signal to the second active kicker group regardless of the voltage level of the high voltage, and provides the disable signal to the third active kicker group.
申请公布号 KR20080075400(A) 申请公布日期 2008.08.18
申请号 KR20070014536 申请日期 2007.02.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, YONG JUN
分类号 G11C11/4074;G11C5/14;G11C11/4076 主分类号 G11C11/4074
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