发明名称 |
Nanoparticles In a Flash Memory Using Chaperonin Proteins |
摘要 |
A method for fabricating a flash memory device where the flash memory device includes a substantially uniform size and spatial distribution of nanoparticles on a tunnel oxide layer to form a floating gate. The flash memory device may be fabricated by defining active areas in a substrate and forming an oxide layer on the substrate. A self-assembled protein lattice may be formed on top of the oxide layer where the self-assembled protein lattice includes a plurality of molecular chaperones. The cavities of the chaperones may provide confined spaces where nanocrystals can be trapped thereby forming an ordered nanocrystal lattice. A substantially uniform distribution of nanocrystals may be formed on the oxide layer upon removal of the self-assembled protein lattice such as through high temperature annealing.
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申请公布号 |
US2008191265(A1) |
申请公布日期 |
2008.08.14 |
申请号 |
US20060915039 |
申请日期 |
2006.05.22 |
申请人 |
BOARD OF REGENTS, THE UNIVERISTY OF TEXAS SYSTEM |
发明人 |
MAO CHUANBIN;TANG SHAN;BANERJEE SANJAY |
分类号 |
H01L29/788;H01L21/336 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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