| 摘要 |
The invention provides a non-volatile memory including a substrate, an active layer, device isolation layers and memory cells. The active layer disposed on the substrate protrudes from the substrate surface. Regarding the active layer, the device isolation layers are respectively disposed on the two sides thereof; the surface of the device isolation layers is lower than that of the active layer; the charge storage layer is disposed on the sidewalls thereof between the control gate and the active layer; the cap layer is disposed in the top section thereof between the control gate and the active layer, and the source/drain region is disposed in the active layer at the two sides of the control gate. Each of the memory cells includes a control gate, a charge storage layer, a cap layer and a source/drain region. The control gate disposed on the substrate crosses over the active layer.
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