| 摘要 |
A memory device including a cell array is disclosed. One embodiment includes a plurality of memory cells, wherein each memory cell is capable of showing at least two distinguishable states, a programmable read voltage source adapted to supply an alterable read voltage and a test control unit. The test control unit includes a voltage control unit that is capable of controlling the read voltage source, a counter unit that is capable of counting the memory cells exhibiting a predetermined state and an analysis unit that is capable of rating a currently determined number of memory cells exhibiting a predetermined state.
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