发明名称 ARCHITECTURE AND METHOD FOR NAND FLASH MEMORY
摘要 A NAND memory architecture arranges all even bitlines of a page together, and arranges all odd bitlines of a page together, so that programming operations are carried out on adjacent bitlines on the same word line to reduce floating gate coupling. Non-connected bitlines can be used at boundaries between even and odd sections of the array to further reduce floating gate coupling.
申请公布号 US2008192538(A1) 申请公布日期 2008.08.14
申请号 US20080107315 申请日期 2008.04.22
申请人 MICRON TECHNOLOGY, INC. 发明人 HAN JIN-MAN
分类号 G11C16/34;G11C16/06 主分类号 G11C16/34
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